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Table of Beamlines at the ALS

Up-to-date information is on the Web at http://www-als.lbl.gov/als/als_users_bl/bl_table.html

No.

Source*

Areas of Research

Energy Range

Avail.

Pages for Abstracts/ Technical Info.

1.4.1

Bend

Ultraviolet photoluminescence

1.6 - 6.2 eV

1998

1/469

1.4.2

Bend

Visible and infrared Fourier transform spectroscopy

0.006 - 3 eV

Now

1/470

1.4.3

Bend

Infrared spectromicroscopy

0.05 - 1 eV

Now

1/471

3.1

Bend

Diagnostic beamline

200 - 280 eV

Now

- / -

3.3.2

Bend

Deep-Etch X-Ray Lithography (LIGA)

3 - 12 keV

Now

- /472

4.0.1-2

EPU5

Magnetic spectroscopy

100 - 2000 eV

1998

- /473

5.0.1

W16

Monochromatic protein crystallography

7 - 14 keV

1998

- /474

5.0.2

W16

Multiple-wavelength (MAD) and monochromatic protein crystallography

3.5 - 14 keV

Now

15/475

6.1.2

Bend

High-resolution zone-plate microscopy

500 - 800 eV

Now

31/476

6.3.1

Bend

Calibration and standards, EUV/soft x-ray optics testing, solid-state chemistry

100 - 2000 eV

1998

- /477

6.3.2

Bend

Calibration and standards; EUV optics testing; atomic, molecular, and materials science

50 - 1300 eV

Now

51/478

7.0.1

U5

Surface and materials science, spectromicroscopy, spin resolution, photon-polarization dichroism

60 - 1000 eV

Now

99/479

7.0.2

U5

Coherent optics experiments

200 - 650 eV

1998

175/483

7.3.1.1

Bend

Magnetic microscopy, spectromicroscopy

260 - 1500 eV

Now

179/484

7.3.1.2

Bend

Surface and materials science, micro x-ray photoelectron spectroscopy

260 - 1500 eV

Now

179/485

7.3.3

Bend

Micro x-ray diffraction, micro x-ray absorption spectroscopy

3 - 12 keV

Now

- /486

8.0.1

U5

Surface and materials science, spectromicroscopy, imaging photoelectron spectroscopy

60 - 1000 eV

Now

195/488

9.0.2.1

U10

Chemical reaction dynamics, photochemistry

5 - 30 eV

Now

305/490

9.0.2.2

U10

High-resolution photoelectron and photoionization spectroscopy

5 - 30 eV

Now

305/491

9.3.1

Bend

Atomic, molecular, and materials science

2.2 - 6 keV

Now

337/492

9.3.2

Bend

Chemical and materials science, circular dichroism, spin resolution

30 - 1500 eV

Now

349/495

10.0.1

U10

High-resolution atomic, molecular, and optical physics; photoemission of highly correlated materials

20 - 320 eV

Now

- /497

10.3.1

Bend

X-ray fluorescence microprobe

3 - 20 keV

Now

371/500

10.3.2

Bend

X-ray optics development, materials science

3 - 12 keV

Now

377/501

11.3.2

Bend

Inspection of EUV lithography masks

50 - 1000 eV

1998

- /502

12.0.1.1

U8

Surface and materials science, spectromicroscopy

60 - 320 eV

Now

395/503

12.0.1.2

U8

EUV lithography optics testing, interferometry

60 - 320 eV

Now

395/504

BTF

ALS linac

Beam Test Facility

50 MeV electrons

Now

409/505

*Bend = bend magnet; EPU5 = 5-cm-period elliptical polarization undulator;
W16 = 16-cm-period wiggler; Ux = x-cm-period undulator

1997 Compendium Index